Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects-Reference-Cited by-同舟云学术

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Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects

Published:1996-09 Issue: Volume:104-105 Page:342-348
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Flietner H.,Füssel W.,Sinh N.D.,Angermann H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. Insulating Films on Semiconductors (INFOS '93), Proc. 8th Conf.,1993

2. Formation of Semiconductor Interfaces, Proc. 4th Int. Conf.,1994

3. Passivation of Metals and Semiconductors,1995

4. Insulating Films on Semiconductors (INFOS '95), Proc. 8th Conf.,1995

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