Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)-Reference-Cited by-同舟云学术

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

Published:2018 Issue: Volume: Page:71-92
ISSN:1571-5744
Container-title:Nanostructure Science and Technology
language:
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Author:

Gilmer David C.,Bersuker Gennadi

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-91896-9_3

Reference51 articles.

1. Lu C-Y (2012) Future prospects of NAND flash memory technology-the evolution from floating gate to charge trapping to 3D stacking. J Nanosci Nanotechnol 12(10):7604–7618

2. Waser R, Aono M (2007) Nanoionics-based resistive switching memories. Nat Mater 6:833–840

3. Chen A (2011) Ionic memory technology. In: Kharton VV (ed) Solid state electrochemistry II; electrodes, interfaces and ceramic membranes. Wiley, [S.l.]. Cap. 1, pp 1–26

4. Bersuker G et al (2017) Toward reliable RRAM performance: macro- and micro-analysis of operation processes. J Comput Electron 16:1085–1094

5. Waser R et al (2009) Redox-based resistive switching memories – Nanoionic mechanisms, prospects, and challenges. Adv Mater 21:2632

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