The FET-Type FeRAM
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-540-45163-1_16.pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolithic In2Se3–In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs;npj 2D Materials and Applications;2022-05-26
2. Simulation of serial RRAM cell based on a Verilog-A compact model;2021 XXXVI Conference on Design of Circuits and Integrated Systems (DCIS);2021-11-24
3. Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?;Applied Physics Letters;2021-02-22
4. Origin of robust out-of-plane ferroelectricity in d1T-MoS2 monolayer;Journal of Physics: Condensed Matter;2019-10-25
5. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi 4 Ti 3 O 12 /p—Si structures by using the admittance spectroscopy method;Chinese Physics B;2013-10
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