Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi 4 Ti 3 O 12 /p—Si structures by using the admittance spectroscopy method-Reference-Cited by-同舟云学术

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi 4 Ti 3 O 12 /p—Si structures by using the admittance spectroscopy method

Published:2013-10 Issue:10 Volume:22 Page:108502
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Yıldırım Mert,Durmuş Perihan,Altındal Şemsettin

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/22/10/108502/pdf

Reference36 articles.

1. Preparation and optical constants of the nano-crystal and polymer composite Bi4Ti3O12/PMMA thin films

2. Lanthanum-doped Bi 4 Ti 3 O 12 ceramics prepared by high-pressure technique

3. Ferroelectric and dielectric properties of La/Mn co-doped Bi 4 Ti 3 O 12 ceramics

4. Studies on structural and electro-optic properties of ferroelectric bismuth titanate thin films

5. NANO-phase SBT-family ferroelectric memories

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