High Photoresponsive p-Si/n-In2O3 Junction Diodes with Low Ideality Factor Prepared Using Closely Packed Octahedral Structured In2O3 Thin Films-Reference-Cited by-同舟云学术

High Photoresponsive p-Si/n-In2O3 Junction Diodes with Low Ideality Factor Prepared Using Closely Packed Octahedral Structured In2O3 Thin Films

Published:2020-07-19 Issue:11 Volume:30 Page:4552-4568
ISSN:1574-1443
Container-title:Journal of Inorganic and Organometallic Polymers and Materials
language:en
Short-container-title:J Inorg Organomet Polym

Author:

Bhuvaneswari S.,Seetha M.,Chandrasekaran J.,Marnadu R.

Funder

Department of Science and Technology-Science and Engineering Research Board

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Polymers and Plastics

Link

https://link.springer.com/content/pdf/10.1007/s10904-020-01663-x.pdf

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