A systematic influence of Cu doping on structural and opto-electrical properties of fabricated Yb2O3 thin films for Al/Cu-Yb2O3/p-Si Schottky diode applications

Author:

Mohan K.S.,Panneerselvam A.,Marnadu R.,Chandrasekaran J.,Shkir Mohd.,Tataroğlu A.

Funder

King Khalid University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry

Reference60 articles.

1. Design and applications of Yb/Ga2Se3/C schottky barriers;Khanfar;IEEE Sens. J.,2017

2. Min-Sung Kang and Chel-Jong Choi, Electrical properties and interface states of rare-earth metal ytterbium schottky contacts to p-type InP;Rajagopal Reddy;Mater. Trans.,2013

3. Preparation of Yb2O3 submicron- and nano-materials via electrospinning;Henriques;Ceram. Int.,2015

4. Structural and electrical characteristics of Yb2O3 and YbTixOy gate dielectrics for α InGaZnO thin-film transistors;Pan;J. Display Technol.,2013

5. Shkir Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/ p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique;Balaji;Appl. Phys. A,2020

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