Enhanced Electrical Performance of in Doped LaPO4 as an Interfacial Layer of Cu/In-LaPO4/n-Si Structured Type Schottky Barrier Diode

Author:

Priya R.,R Dr Mariappan,Jayaprakash R.N.,Chandrasekaran J.,Balasubramani V.

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference35 articles.

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4. The role of ultra-thin SiO 2 layers in metal-insulatorsemiconductor (MIS) photoelectrochemical devices (Presentation Recording);V Daniel;Low-Dimensional Materials and Devices,2015

5. Colossal photosensitive boost in Schottky diode behavior with Ce-V 2 O 5 interfaced layer of MIS structure;V Balasubramani;Sensors and Actuators A: Physical,2020

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