Effects of ionizing radiation on integrated circuits
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/content/pdf/10.1007/s00502-015-0380-8.pdf
Reference21 articles.
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3. Autran, J. L., Balland, B., Barbottin, G. (1999): Charge pumping techniques—their use for diagnosis and interface state studies in MOS transistors. In G. Barbottin, A. Vapaille (Eds.), Instabilities in silicon devices, new insulators, devices and radiation effects (pp. 405–494). Amsterdam: Elsevier.
4. Barnaby, H. (2006): Total-ionizing-dose effects in modern CMOS technologies. IEEE Trans. Nucl. Sci., 53(6), 3103–3121.
5. Calin, T., Nicolaidis, M., Velazco, R. (1996): Upset hardened memory design for submicron CMOS technology. IEEE Trans. Nucl. Sci., 43(6), 2874–2878.
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