A radiation-hard curvature compensated bandgap voltage reference
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/article/10.1007/s00502-018-0591-x/fulltext.html
Reference16 articles.
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2. Bezhenova, V., Michalowska-Forsyth, A. (2016): Total ionizing dose effects on MOS transistors fabricated in 0.18 μm CMOS technology. In 2016 Asia-Pacific international symposium on electromagnetic compatibility (APEMC) (Vol. 01, pp. 366–369). https://doi.org/10.1109/APEMC.2016.7522739 .
3. Bezhenova, V., Michalowska-Forsyth, A. M. (2016): Effects of ionizing radiation on integrated circuits. E&I, Elektrotech. Inf.tech., 133(1), 39–42. https://doi.org/10.1007/s00502-015-0380-8 .
4. Brokaw, A. (1974): A simple three-terminal IC bandgap reference. In 1974 IEEE international solid-state circuits conference. Digest of technical papers (Vol. XVII, pp. 188–189). https://doi.org/10.1109/ISSCC.1974.1155346 .
5. Faccio, F., Cervelli, G. (2005): Radiation-induced edge effects in deep submicron CMOS transistors. IEEE Trans. Nucl. Sci., 52(6), 2413–2420. https://doi.org/10.1109/TNS.2005.860698 .
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