Effects of the physical parameter on gate all around FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s12046-019-1232-8.pdf
Reference19 articles.
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4. Park J T and Colinge J P 2002 Multiple-gate SOI MOSFETs: device design guidelines. IEEE Trans. Electron Devices 49: 2222–2229
5. Dhiman G and Ghosh P K 2017 Analytical modeling of threshold voltage for double-gate MOSFET. International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS), pp. 1584–1588
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