The Effect of Grain Boundary Type on Void Formation in a Through Silicon Via (TSV)
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-22524-6_85
Reference20 articles.
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3. Basavalingappa A, Shen MY, Lloyd JR (2017) Effect of texture and elastic anisotropy of copper microstructure on reliability. In: Proceedings of the 2016 IEEE international integrated reliability workshop, IIRW 2016. pp. 57–60. https://doi.org/10.1109/IIRW.2016.7904901
4. Frank T et al (2013) Reliability of TSV interconnects: electromigration, thermal cycling, and impact on above metal level dielectric. Microelectron Reliab 53(1):17–29. https://doi.org/10.1016/J.MICROREL.2012.06.021
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1. Void Nucleation in a Through Silicon Via (TSV): Unraveling the Role of Tilt Grain Boundaries Through Atomistic Investigation;The Minerals, Metals & Materials Series;2024
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