Technological Advances Towards 4H-SiC JBS Diodes for Wind Power Applications
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-11973-7_11
Reference5 articles.
1. Seman, S., Niiranen, J., Virtanen, R., et al.: Low voltage ride-through analysis of 2 MW DFIG wind turbine - grid code compliance validations. Energy Society General Meeting, Pittsburgh, PA, USA (2008)
2. Huang, X., Wang, G., Lee, M.-C., et al.: Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress. In: 2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, NC, USA (2012)
3. Huang, Y., Wachutka, G.: Comparative study of contact topographies of 4.5 kV SiC MPS diodes for optimizing the forward characteristics. In: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany (2016)
4. Jiang, Y.F., Baliga, B.J., Huang, A.Q.: Influence of lateral straggling of implated aluminum ions on high voltage 4H-SiC device edge termination design. Mater. Sci. Forum 924, 361–364 (2018)
5. Schoeck, J., Buettner, J., Rommel, M., et al.: 4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density. Mater. Sci. Forum 897, 427–430 (2017)
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