Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress-Reference-Cited by-同舟云学术

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Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

Published:2012-09 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Huang Xing,Wang Gangyao,Lee Meng-Chia,Huang Alex Q.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6331795/6342155/06342436.pdf?arnumber=6342436

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode;IEEE Transactions on Electron Devices;2024-06

2. Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias Stress;IEEE Transactions on Electron Devices;2024-05

3. The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents;Scientific Reports;2023-11-06

4. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices;Micromachines;2023-10-31

5. Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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