Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7588793/7605130/07605161.pdf?arnumber=7605161
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel Layout Design of 4H-SiC Merged PiN Schottky Diodes Leading to Improved Surge Robustness;Chinese Physics B;2022-12-21
2. The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes;IEEE Transactions on Electron Devices;2022-03
3. A 4H-SiC merged P–I–N Schottky with floating back-to-back diode;Chinese Physics B;2022-01-01
4. Plasma Spreading Layers: An Effective Method for Improving Surge and Avalanche Robustness of SiC Devices;IEEE Transactions on Electron Devices;2021-11
5. The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes;Materials;2021-01-31
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