1. C.Y. Lu, K.Y. Hsieh, R. Liu, Microelectron. Eng. 86, 283–286 (2009)
2. S.S. Chung, P.Y. Chiang, G. Chou, C.-T. Huang, P. Chen, C.H. Chu, C.C.H. Hsu, in IEDM Tech. Dig., pp. 617–620 (2003)
3. C.H. Ho, E.K. Lai, M.D. Lee, C.L. Pan, Y.D. Yao, K.Y. Hsieh, R. Liu, C.Y. Lu, A highly reliable self-aligned graded oxide WO x resistance memory: Conduction mechanisms and reliability, in VLSI Symp. Tech. Dig., pp. 228–229 (2007)
4. H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien, M.-J. Tsai, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM, in IEDM Tech. Dig., pp. 297–230 (2008)
5. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, M. Oshima, Highly reliable TaO x ReRAM and direct evidence of redox reaction mechanism, in IEDM Tech. Dig., pp. 293–296 (2008)