Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices-Reference-Cited by-同舟云学术

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Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices

Published:2012-09-01 Issue:1 Volume:110 Page:211-216
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Chen Kai-Huang,Liao Chin-Hsiung,Tsai Jen-Hwan,Wu Sean

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-012-7116-y.pdf

Reference24 articles.

1. T.C. Chang, T.M. Tsai, G.W. Chang, K.C. Chang, Y.H. Tai, M.J. Tsai, Y.L. Wang, S.M. Sze, Appl. Phys. Lett. 100, 02290 (2012)

2. W. Lee, J. Park, S. Kim, J. Woo, J. Shin, D. Lee, E. Cha, H. Hwang, Appl. Phys. Lett. 100, 142106 (2012)

3. M. Houssa, J.A. Kittl, M. Jurczak, V.V. Afanasev, A. Stesmans, Appl. Phys. Lett. 100, 142102 (2012)

4. J. Kong, S. Song, K. Lee, T. Lee, H. Hwang, S. Jeon, Appl. Phys. Lett. 99, 142110 (2011)

5. S.R. Shannigrahi, H.M. Jang, Appl. Phys. Lett. 79, 1051 (2001)

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