Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference55 articles.
1. E. Abou-Allam, T. Manku, M. Ting and M. S. Obrecht, Impact of technology scaling on CMOS RF devices and circuits. Proceedings of the IEEE 2000 custom integrated circuits conference (Cat. No.00CH37044), Orlando, FL, USA 361–364 (2000)
2. Y. Cui, Z. Zhong, D. Wang, W.U. Wang, C.M. Lieber, High performance silicon nanowire field effect transistors. Nano. Lett. 3(2), 149–152 (2003)
3. M. Ionescu, H. Riel, Tunnel field-effect transistors as energy efficient electronic switches. Nature 479, 329–337 (2011)
4. A. Seabaugh, Q. Zhang, Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE. 98(22), 2095–2110 (2010)
5. A. Ortiz-Conde, F.J. García-Sánchez, J. Muci, A. Sucre-González, J.A. Martino, P.G. DerAgopian et al., Threshold voltage extraction in Tunnel FETs. Solid-State. Electron. 93, 49–55 (2014)
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献