Temperature effect on RF/analog and linearity parameters in DMG FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/article/10.1007/s00339-018-2068-5/fulltext.html
Reference33 articles.
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3. S. Tang, L. Chang, N. Lindert et al., FinFET—a quasiplanar double-gate MOSFET. Proc. Int. Solid-State Circuits Confer. (2001). https://doi.org/10.1109/ISSCC.2001.912568
4. M.J. Kumar, A. Chaudhry, Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs. IEEE Trans. Electron Devices 51(4), 569–574 (2004)
5. C. Li, Y. Zhuang, L. Zhang, Simulation study on FinFET with tri-material gate. 2012 IEEE international conference on electron devices and solid state circuit (EDSSC), Bangkok (2012). https://doi.org/10.1109/EDSSC.2012.6482802
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