Comparison study of RF/analog and linearity performance of dual material gate graphene source vertical TFET (DMG-GR-VTFET) and single material gate GR-VTFET

Abstract

Abstract This paper investigates the comparative feature of Graphene Source Single Material Gate Vertical Tunnel FET (SMG-GR-VTFET) and Graphene Source Double Material Gate VTFET (DMG-GR-VTFET) on DC, analog/RF and linearity applications using Sentaurus TCAD simulator. The results show that both devices outperforms in DC characteristics, including ambipolar current, subthreshold swing (SS), ION/IOFF ratio etc The study focuses on important figures of merit (FOMs) such as transconductance (gm), output conductance (gd), cut-off frequency (ft), second-order transconductance (gm2), third-order transconductance (gm3), VIP2, and VIP3, which are all improved due to high mobility of graphene leads to improved band-to-band tunneling. The observed ION is 5.2 × 10−4 (1.1 × 10−3 A/μm), IOFF is 1.439 × 10−13 (2.28 × 10−16A/μm) and ION/IOFF ratio of 3.613 × 109 (4.824 × 1012) for SMG-GR-VTFET (DMG-GR-VTFET), respectively. It is seen that maximum gm is 2.96 × 10−3 (2.59 × 10−3 S μm−1) and cut-off frequency (ft) values of 1.1 × 1011 (1.85 × 1011 Hz) for SMG-GR-VTFET (DMG-GR-VTFET), respectively. Regarding the Linearity parameter VIP2 value is 2.71 V (0.99 V), respectively, for SMG-GR-VTFET (DMG-GR-VTFET). These results suggest that Graphene Source Vertical Tunnel FET is an excellent choice for analog and high-frequency applications.