Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference52 articles.
1. T. Mnatsakanov, L. Pomortseva, S. Yurkov, Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level. Phys. Astron. 35(4), 394–397 (2001)
2. M. Ostling, High power devices in wide bandgap semiconductors. Sci. China Inf. Sci. 5, 1087–1093 (2011)
3. C.A. Zormann, M. Mehregany, in Micromachining of SiC. Silicon Carbide, ed. by W.J. Choyke, H. Matsunami, G. Pensl (Springer, Berlin, 2004), pp. 671–698
4. D. Zhuang, J.J. Edgar, Wet etching of GaN, AlN, and SiC: a review. Mater. Sci. Eng. 48(1), 1–46 (2005)
5. H. Cho, P. Leerungnawarat, D.C. Hays, S. Pearton, S. Chu, R. Strong, C. Zetterling, M. Ostling, F. Ren, Ultradeep, low-damage dry etching of SiC. Appl. Phys. Lett. 76(6), 739–741 (2000)
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献