Ultradeep, low-damage dry etching of SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125879
Reference17 articles.
1. Silicon carbide high-power devices
2. Residue‐Free Reactive Ion Etching of 3 C ‐ SiC and 6 H ‐ SiC in Fluorinated Mixture Plasmas
3. Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System
4. Residue‐free reactive ion etching of β‐SiC in CHF3/O2with H2additive
5. Sulfur Hexafluoride Reactive Ion Etching of (111) Beta ‐ SiC Epitaxial Layers, Grown on (111) TiC Substrates
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