Publisher
Springer Science and Business Media LLC
Reference42 articles.
1. Baliga B J. Silicon Carbide Power Devices. New Jersey: World Scientific Publishing Co. Pte. Ltd, 2005
2. Östling M, Koo S M, Domeij M, et al. SiC Device Technologies. Encyclopedia of RF and Microwave Engineering. New Jersey: John Wiley & Sons, Inc, 2005. 4613–4619
3. Östling M, Domeij M, Zaring C, et al. SiC bipolar power transistors — design and technology issues for ultimate performance. In: Saddow S E, Sanchez E, Zhao F, eds. Silicon Carbide 2010-Materials, Processing, and Devices, Oslo, 2010. Warrendale Mater Res Soc Symp Proc, 2010. 1246: B08–01
4. Ghandi R, Lee H S, Domeij M, et al. Fabrication of 2700-V 12 mΩ·cm2 non Ion-implanted 4H-SiC BJTs with commonemitter current gain of 50. IEEE Electron Dev Lett, 2008, 29: 1135–1137
5. Lee H S, Domeij M, Zetterling C M, et al. 1200-V 5.2-mΩ·cm2 4H-SiC BJTs with a high common-emitter current gain. IEEE Electron Dev Lett, 2007, 28: 1007–1009
Cited by
21 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献