Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge-Reference-Cited by-同舟云学术

Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

Published:2004-12 Issue:8 Volume:79 Page:1959-1963
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Tong X.L.,Zheng Q.G.,Hu S.L.,Qin Y.X.,Ding Z.H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-003-2106-8.pdf

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