Mechanism study of SiO2 layer formation and separation at the Si die sidewall during nanosecond laser dicing of ultrathin Si wafers with Cu backside layer-Reference-Cited by-同舟云学术

Mechanism study of SiO2 layer formation and separation at the Si die sidewall during nanosecond laser dicing of ultrathin Si wafers with Cu backside layer

Published:2020-01-30 Issue:2 Volume:126 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Marks Michael Raj^ORCID,Yong Foo Khong,Cheong Kuan Yew,Hassan Zainuriah

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-020-3322-1.pdf

Reference28 articles.

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2. M.R. Marks, Z. Hassan, K.Y. Cheong, Effect of nanosecond laser dicing on the mechanical strength and fracture mechanism of ultrathin Si dies with Cu stabilization layer. IEEE Trans. Compon. Packag. Manuf. Technol. 5(12), 1885–1897 (2015)

3. M.R. Marks, K.Y. Cheong, Z. Hassan, An improved three-point bending test method for the investigation of nanosecond laser dicing of ultrathin Si dies with Cu stabilization layer. Mater. Charact. 136, 29–40 (2018)

4. W.N. Sharpe Jr., J. Pulskamp, D.S. Gianola, C. Eberl, R.G. Polcawich, R.J. Thompson, Strain measurements of silicon dioxide microspecimens by digital imaging processing. Exp. Mech. 47(5), 649–658 (2007)

5. S.M. Hu, Critical stress in silicon brittle fracture, and effect of ion implantation and other surface treatments. J. Appl. Phys. 53(5), 3576–3580 (1982)

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