Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory-Reference-Cited by-同舟云学术

Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

Published:2007-02-01 Issue:1 Volume:87 Page:57-62
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Feng J.,Zhang Y.,Qiao B.W.,Lai Y.F.,Lin Y.Y.,Cai B.C.,Tang T.A.,Chen B.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-006-3851-2.pdf

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