Material and process engineering challenges in Ge-rich GST for embedded PCM-Reference-Cited by-同舟云学术

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Material and process engineering challenges in Ge-rich GST for embedded PCM

Published:2022-01 Issue: Volume:137 Page:106184
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Redaelli Andrea^ORCID,Petroni Elisa,Annunziata Roberto^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. A 90nm phase change memory technology for stand-alone non-volatile memory applications;Pellizzer,2006

2. A 45nm generation phase change memory technology;Servalli,2009

3. A stackable cross point Phase Change Memory;Kau,2009

4. Phase change memory for automotive grade embedded NVM applications;Cappelletti;J. Phys. D Appl. Phys.,2020

5. High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM;Kim,2018

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1. Operando electrical biasing TEM experiments of Ge-rich GST thin films with FIB sample preparation;Journal of Alloys and Compounds;2024-10

2. Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics;Advanced Electronic Materials;2024-09-11

3. Special kinetics features of scandium antimonide thin films conducive to swiftly embedded phase-change memory applications;Science China Materials;2024-09-10

4. High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications;npj Computational Materials;2024-08-25

5. Electrically Reconfigurable Phase‐Change Transmissive Metasurface;Advanced Materials;2024-07-22

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