High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications-Reference-Cited by-同舟云学术

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High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Published:2024-08-25 Issue:1 Volume:10 Page:
ISSN:2057-3960
Container-title:npj Computational Materials
language:en
Short-container-title:npj Comput Mater

Author:

Sun Suyang,Wang Xiaozhe,Jiang Yihui,Lei Yibo,Zhang Siyu,Kumar Sanjay^ORCID,Zhang Junying,Ma En^ORCID,Mazzarello Riccardo,Wang Jiang-Jing,Zhang Wei^ORCID

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

PRIN 2020 project “Neuromorphic devices based on chalcogenide heterostructures” funded by the Italian Ministry for University and Research

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41524-024-01387-3.pdf

Reference94 articles.

1. Wuttig, M. & Yamada, N. Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824–832 (2007).

2. Zhang, W., Mazzarello, R., Wuttig, M. & Ma, E. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat. Rev. Mater. 4, 150–168 (2019).

3. Fong, S. W., Neumann, C. M. & Wong, H.-S. P. Phase-change memory—towards a storage-class memory. IEEE Trans. Electron. Dev. 64, 4374–4385 (2017).

4. Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R. & Eleftheriou, E. Memory devices and applications for in-memory computing. Nat. Nanotechnol. 15, 529–544 (2020).

5. Youngblood, N., Ríos Ocampo, C. A., Pernice, W. H. P. & Bhaskaran, H. Integrated optical memristors. Nat. Photon 17, 561–572 (2023).

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