Impact of gate overlap and underlap on analog/RF and linearity performance of dual-material gate-oxide-stack double-gate TFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-022-06083-x.pdf
Reference45 articles.
1. R.H. Yan, O. Abbas, K.F. Lee, Scaling the Si MOSFET: from bulk to SOI to bulk. IEEE Trans. Electron Devices 39(7), 1704–1710 (1992)
2. K.K. Young, Short-channel effect in fully-depleted SOI MOSFETs. IEEE Trans. Electron Devices 36(2), 399–402 (1989)
3. S. Bangsaruntip, G.M. Cohen, A. Majumdar, J.W. Sleight, Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Trans. Electron Devices 31(9), 903–905 (2010)
4. P. Verma, S. Kumar, K. Nigam, Performance Analysis of Stack Gate Oxide Underlap TFET Utilising Metal Strip Mechanism, International Conference on Signal Processing and Communication (ICSC), 372-376 (2021)
5. Y. Cui, Z. Zhong, D. Wang, W.U. Wang, C.M. Lieber, Nano Lett. 3(2), 149–152 (2003)
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