GSE and GWE Techniques to improve ON (IoN) current and Ambipolar conduction of Tunnel FET(TFET) device-Reference-Cited by-同舟云学术

GSE and GWE Techniques to improve ON (IoN) current and Ambipolar conduction of Tunnel FET(TFET) device

Published:2024-02-23 Issue: Volume:53 Page:43-46
ISSN:
Container-title:2024 International Conference on Social and Sustainable Innovations in Technology and Engineering (SASI-ITE)
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Author:

Reddy Nelaturi Nagendra¹,Panda Deepak Kumar²,Rajesh Kommalapati³,Jayalakshmi Bitra⁴,Rao Goli Srinivasa⁵,Ramasamy Sarankumar⁶

Affiliation:

1. SASTRA University,Device Modelign Lab,School of Electrical and Electronics Engineering,Thanjavur,Tamilnadu,India

2. Amrita Vishwa Vidyapeetham, Amaravati Campus,Amrita School of Engineering,Department of ECE,Andhra Pradesh,India

3. Bapatla Engineering College,Department of ECE,Bapatla,Andhra Pradesh,India

4. School of Electronics VIT-AP Univeristy,Amaravati,Andhra Pradesh,India,522237

5. VFSTR Deemed to be University,Department of Sciences & Humanities,Vadlamudi, Guntur(Dt.),A.P,India

6. Karpagam College of Engineering,Department of ECE,Coimbatore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10606964/10606945/10607008.pdf?arnumber=10607008

Reference31 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

3. Double gate Strained-Ge heterostructure tunneling FET (TFET) with record high drive currents and <60 mv/dec subthreshold slope;Krishnamohan;Proc. IEDM Tech Dig,2008

4. Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

5. A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity