Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission-Reference-Cited by-同舟云学术

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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

Published:2004-08 Issue:3 Volume:79 Page:587-591
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Bouzaiene L.,Ilahi B.,Sfaxi L.,Hassen F.,Maaref H.,Marty O.,Dazord J.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-003-2455-3.pdf

Reference26 articles.

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2. N.P. Kobayashi, T.R. Ramachandran, P. Chen, A. Madhukar: Appl. Phys. Lett. 68, 3299 (1996)

3. N.N. Ledentsov et al.: Phys. Rev. B 54, 8743 (1996)

4. N. Yokoyama, S. Muto, K. Imamura, M. Takatsu, T. Mori, Y. Sugiyama, Y. Sakuma, H. Nakao, Adachihara: Solid -State Electron. 40, 505 (1996)

5. S. Hinooda, S. Frechengues, B. Lambert, S. Loualiche, M. Paillard,X. Marie, T. Amand: Appl. Phys. Lett. 75, 3530 (1999)

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