Optimizing dot-in-a-well infrared detector architecture for achieving high optical and device efficiency corroborated with theoretically simulated model

Author:

Ghadi H.,Patwari J.,Murkute P.,Das D.,Singh P.K.,Dubey S.,Bhatt M.,Chatterjee A.,Balgarkashi A.,Pal S.K.,Chakrabarti S.ORCID

Funder

DST

Department of Science and Technology

IITBNF

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference29 articles.

1. H. Ghadi, S. Sengupta, S. Shetty, A. Manohar, and S. Chakrabarti, N. Pendyala, S. Prajapati and A. Kumar, “Comparison of three design architectures for quantum dot infrared photodetectors: InGaAs-capped dots, dots-in-a-well, and submonolayer quantum dots”, IEEE Trans. Nanotechnol., Vol. 14, No.4, pp.603 – 607.

2. Effects of a cap layer on the confined sublevels in near-surface InAs/GaAs quantum dots;Lee;J. Kor. Phys. Soc.,2005

3. In-situ monitoring of InAs/GaAs QDs by using spectral reflectance;Ahn;J. Kor. Phys. Soc.,2006

4. InAs island-induced-strain driven adatom migration during GaAs overlayer growth;Madukar;Appl. Phys. Lett.,1994

5. High potential barrier effects on self-assembled InAs quantum dots;Jung;J. Kor. Phys. Soc.,2007

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