Mechanism of nanosecond laser drilling process of 4H-SiC for through substrate vias
Author:
Funder
Japan Society for the Promotion of Science
Amada Foundation
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/article/10.1007/s00339-017-0986-2/fulltext.html
Reference50 articles.
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4. H. Cho, P. Leerungnawarat, D.C. Hays, S.J. Pearton, S.N.G. Chu, R.M. Strong, C.M. Zetterling, M. Östling, F. Ren, Ultradeep, low-damage dry etching of SiC. Appl. Phys. Lett. 76, 739–741 (2000)
5. J.J. Wang, E.S. Lambers, S.J. Pearton, M. Ostling, C.M. Zetterling, J.M. Grow, F. Ren, R.J. Shul, Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries. J. Vac. Sci. Technol. A16, 2204–2209 (1998)
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