1. Brambilla (P.), Fantini (E), Guarini (G.), Mattana (G.), Piacentini (G. E). GaAs mesfet technology and reliability as-pects.Alta Frequenza (1986),55, n° 3, pp. 81–93.
2. Palmstr0m (C. J.), Morgan (D. V.). Metallizations for GaAs devices and circuits.Gallium arsenide. Materials, devices and circuits, edited by M. J. Howes and D. V. Morgan, John Wiley & Sons ({dy1985}), pp. 195-261.
3. Webb (P. W.). Measurements of thermal resistance using electrical methods.IEEE Proceedings-Part I (1987),34, n° 2, pp. 51–56.
4. Canali (C), Chiussi (E), Donzelli (G.), Magistrali (R), Zanoni (E.). Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power mesfet devices.Microelectronics and Reliability (1989),29, n° 2, pp. 117–124.
5. Canali (C), Chiussi (E), Fantini (E), Muzzin (G.), Umena (L.). Test fixture for mesfet reliability life tests.Microelectronics and Reliability (1987),27, n° 5, pp.897–911.