Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices-Reference-Cited by-同舟云学术

Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices

Published:1989-01 Issue:2 Volume:29 Page:117-124
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Canali C.,Chiussi F.,Donzelli G.,Magistrali F.,Zanoni E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Thermal resistance of GaAs field-effect transistors;Fukui;IEDM Tech. Dig.,1980

2. Thermal design of power GaAs FET's;Wemple,1982

3. Measurements of thermal resistance using electrical methods;Webb,1987

4. Measurements of thermal transients in semiconductor power devices and circuits;Webb,1983

5. Device thermal resistance measurement by IR scanning;MSC Application note GP-201,1977

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