Germanium content dependence of the leakage current of recessed SiGe source/drain junctions-Reference-Cited by-同舟云学术

Germanium content dependence of the leakage current of recessed SiGe source/drain junctions

Published:2007-01-23 Issue:7 Volume:18 Page:787-791
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Simoen Eddy Roger,Bargallo Gonzalez Mireia,Eneman Geert,Verheyen Peter,Benedetti Aldo,Bender Hugo,Loo Roger,Claeys Cor

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-006-9102-7.pdf

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5. G. Eneman, P. Verheyen, R. Rooyackers, F. Nouri, L. Washington, R. Degraeve, B. Kaczer, V. Moroz, A. De Keersgieter, R. Schreutelkamp, M. Kawaguchi, Y. Kim, A. Samoilov, L. Smith, P.P. Absil, K. De Meyer, M. Jurczak, S. Biesemans, in Symp on VLSI Technology Dig. (The IEEE, New York, 2005) p. 22

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