Tungsten work function engineering for dual metal gate nano-CMOS-Reference-Cited by-同舟云学术

Tungsten work function engineering for dual metal gate nano-CMOS

Published:2005-07 Issue:7 Volume:16 Page:433-436
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Efavi J. K.,Mollenhauer T.,Wahlbrink T.,Gottlob H. D. B.,Lemme M. C.,Kurz H.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-005-2310-8.pdf

Reference14 articles.

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4. R. W. Murto, M. I. Garner, G. A. Brown, P. M. Zeitzoff and H. R. Huff, Solid State Technology (October 2003).

5. H. S. P. Wong, IBM J. Res. Dev. 46(2/3) (2002) 133–168.

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