1. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C.T. Liu, R.C. Keller, T. Horiuchi, NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-/spl mu/m gate CMOS generation, in Symposium on VLSI Technology: Digest of Technical Papers (2000), p. 92
2. Y. Mitani, M. Nagamine, H. Satake, A. Toriumi, NBTI mechanism in ultra-thin gate dielectric-nitrogen-originated mechanism in SiON, in IEEE International Electron Devices Meeting Technical Digest (2002), p. 509
3. S. Ramey, A. Ashutosh, C. Auth, J. Clifford, M. Hattendorf, J. Hicks, R. James, A. Rahman, V. Sharma, A. St.Amour, C. Wiegand, Intrinsic transistor reliability improvements from 22 nm tri-gate technology, in IEEE International Reliability Physics Symposium Proceedings (2013), p. 4C.5.1
4. W. McMahon, C. Tian, S. Uppal, H. Kothari, M. Jin, G. LaRosa, T. Nigam, A. Kerber, B.P. Linder, E. Cartier, W.L. Lai, Y. Liu, R. Ramachandran, U. Kwon, B. Parameshwaran, S. Krishnan, V. Narayanan, Intrinsic dielectric stack reliability of a high performance bulk planar 20 nm replacement gate high-k metal gate technology and comparison to 28 nm gate first high-k metal gate process, in IEEE International Reliability Physics Symposium Proceedings (2013), p. 4C.4.1
5. S. Mahapatra, N. Goel, S. Desai, S. Gupta, B. Jose, S. Mukhopadhyay, K. Joshi, A. Jain, A.E. Islam, M.A. Alam, A comparative study of different physics-based NBTI models. IEEE Trans. Electr. Dev. 60 (2013), 901