Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process-Reference-Cited by-同舟云学术

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Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Reliability Physics Symposium (IRPS)
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Author:

McMahon W.,Tian C.,Uppal S.,Kothari H.,Jin M.,LaRosa G.,Nigam T.,Kerber A.,Linder B. P.,Cartier E.,Lai W. L.,Liu Y.,Ramachandran R.,Kwon U.,Parameshwaran B.,Krishnan S.,Narayanan V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6523362/6531927/06532016.pdf?arnumber=6532016

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Mechanism of BTI Degradation—Direct Estimation of Trap Generation and Trapping;Fundamentals of Bias Temperature Instability in MOS Transistors;2015-08-06

2. A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs;Microelectronics Reliability;2014-03

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