1 Active matrix monolithic micro-LED full-color micro-display
来源：J SOC INF DISPLAY( P 1071-0922 E 1938-3657 ) 发表时间: 2021/01
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2 Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2016/05
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3 Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
来源：IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2017/03
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4 848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mas..
来源：OPT EXPRESS( P 1094-4087 E ) 发表时间: 2021/03
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5 Vertical β-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Perform..
来源：PHYS STATUS SOLIDI A( P 1862-6300 E 1862-6319 ) 发表时间: 2020/02
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贡献度：参与作者
6 Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2016/09
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7 Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
来源：IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2016/04
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8 Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
来源：PHYS STATUS SOLIDI A( P 1862-6300 E 1862-6319 ) 发表时间: 2017/08
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9 Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED ep..
来源：J SOC INF DISPLAY( P 1071-0922 E 1938-3657 ) 发表时间: 2021/03
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10 Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology
来源：IEEE PHOTONIC TECH L( P 1041-1135 E 1941-0174 ) 发表时间: 2021/06
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