1 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below 1 μA/cm2
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2020/03
类型：期刊论文 为本人加分：8688.559924
2 Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
来源：IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2017/03
类型：期刊论文 为本人加分：5046.819109
3 Vertical β-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Perform..
来源：PHYS STATUS SOLIDI A( P 1862-6300 E 1862-6319 ) 发表时间: 2020/02
类型：期刊论文 为本人加分：3383.109406
贡献度：单独第一作者;单独通讯作者
4 X-ray Detection Performance of Vertical Schottky Photodiodes Based on a Bulk beta-Ga2O3 Substrate Gr..
来源：ECS J SOLID STATE SC( P 2162-8769 E ) 发表时间: 2019/02
类型：期刊论文 为本人加分：2818.184426
5 Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light..
来源：APPL PHYS LETT( P 0003-6951 E 1077-3118 ) 发表时间: 2016/08
类型：期刊论文 为本人加分：2718.734170
6 Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining sur..
来源：SEMICOND SCI TECH( P 0268-1242 E 1361-6641 ) 发表时间: 2016/05
类型：期刊论文 为本人加分：2696.994101
7 Band alignment and electrical properties of NiO/-Ga2O3 heterojunctions with different -Ga2O3 orienta..
来源：APPL SURF SCI( P 0169-4332 E 1873-5584 ) 发表时间: 2023/06
类型：期刊论文 为本人加分：2676.082682
8 High Performance Monolithically Integrated GaN Driving VMOSFET on LED
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2017/06
类型：期刊论文 为本人加分：2292.392062
9 Schottky x-ray detectors based on a bulk beta-Ga2O3 substrate
来源：APPL PHYS LETT( P 0003-6951 E 1077-3118 ) 发表时间: 2018/03
类型：期刊论文 为本人加分：2282.438748
10 Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes
来源：IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2019/07
类型：期刊论文 为本人加分：2194.925628