The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE-Reference-Cited by-同舟云学术

The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE

Published:2008 Issue:4 Volume:2 Page:824-832
ISSN:1881-3054
Container-title:Journal of Advanced Mechanical Design, Systems, and Manufacturing
language:en
Short-container-title:JAMDSM

Author:

KAKUTA Akira¹,FURUKAWA Yuji²,MORONUKI Nobuyuki¹

Affiliation:

1. Graduate School of System Design, Tokyo Metropolitan University

2. Graduate School of Technology Management, Tokyo University of Agriculture & Technology

Publisher

Japan Society of Mechanical Engineers

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering

Link

http://www.jstage.jst.go.jp/article/jamdsm/2/4/2_4_824/_pdf

Reference8 articles.

1. (1) Namba Y., Kobayashi H., Suzuki H., K. Yamashita, Taniguchi N., Ultraprecision surface grinding of chemical vapor deposited silicon carbide for X-ray mirrors using resinoid-bonded diamond wheels, Annals of the CIRP, Vol. 48, No. 1(1999), pp. 277-280

2. (2) Kakuta A., Miyakoshi H., Moronuki N., Furukawa Y., A study on the SiC hetero-epitaxial growth process on silicon substrate, Proceedings of the 9th International Conference on Production Engineering (ICPE), (1999), pp. 279-284.

3. (3) Kakuta A., Hashimoto K., Moronuki N., Furukawa Y., Improvement of properties of SiC mirror surface epitaxially grown on silicon substrate, Initiatives of precision engineering at the beginning of a millennium, 10th ICPE, (2001), pp. 354-358

4. (4) Kakuta A., Moronuki N., Furukawa Y., Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source, JSME International Journal, Vol. 47, No. 1(2004), pp. 123-128

5. Investigation of Surface Formation Process of Silicon Molecular Beam Epitaxy by Atomic Force Microscopy