A Novel High Performance Die Attach for Ceramic Packages-Reference-Cited by-同舟云学术

A Novel High Performance Die Attach for Ceramic Packages

Published:1999-03-15 Issue:2 Volume:122 Page:168-171
ISSN:1043-7398
Container-title:Journal of Electronic Packaging
language:en
Short-container-title:

Author:

Shi J. Z.¹,Xie X. M.¹,Stubhan F.²,Freytag J.²

Affiliation:

1. SIM DaimlerChrysler Lab, Shanghai Institute of Metallurgy, 865 Changning Road, Shanghai 200050, P.R. China

2. DaimlerChrysler Research Institute, Goldsteinstrasse 235, D-60528 Frankfurt, Germany

Abstract

A novel two-step process based on isothermal solidification is developed for die attachment of ceramic package. With a simple design of the multilayer system, silicon chip could be bonded onto the allumina substrate in between 200°C and 300°C. The total process time is less than 15 seconds during which the actual assembly time is within one second. Most of the samples can pass the shear strength test specified by MIL STD 883D. All the samples could pass 1750 cycles between −55°C and 125°C with slight degradation in die shear strength after the test. The microstructures of the bonds are characterized with metallographical investigation. Comparisons are made between the present technique and the Au/Si eutectic bonding. [S1043-7398(00)01202-0]

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Link

http://asmedigitalcollection.asme.org/electronicpackaging/article-pdf/122/2/168/5882086/168_1.pdf

Reference12 articles.

1. Bernstein, L. , 1966, “Semiconductor joining by the solid-interdiffusion,” J. Electrochem. Soc., 113, p. 12821282.

2. Bernstein, L., and Bartholomew, H., 1996, “Application of solid-liquid interdiffusion bonding in integrated-circuit fabrication,” Trans. Metall. Soc. AIME, 236, p. 405405.

3. Schmid-Fetzer, R., 1995, “Fundamentals of bonding by isothermal solidification for high temperature semiconductor application,” Design Fundamentals of High Temperature Composites, Intermetallics and Metal-Ceramics System, R. Y. Lin, Y. A. Chang, R. G. Reddy, and C. T. Liu, eds., The Minerals, Metals and Materials Society.

4. Lee, C. C., Wang, C. Y., and Matijasevic, G., 1993, “Au-In bonding below the eutectic temperature,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 16, p. 311311.

5. Chen, Y. C., William, W. So, and Lee, C. C., 1997, “A fluxless bonding technology using indium-silver multilayer composites,” IEEE Trans. Compon., Packag. Manuf. Technol., Part A, 20, No. 1, p. 4646.

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