Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer-Reference-Cited by-同舟云学术

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

Published:2015 Issue:1 Volume:56 Page:10-16
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Khurelbaatar Zagarzusem¹,Shim Kyu-Hwan¹,Cho Jaehee¹,Hong Hyobong²,Reddy V. Rajagopal³,Choi Chel-Jong¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University

2. IT Convergence Technology Research Laboratory, Electronics & Telecommunication Research Institute

3. Department of Physics, Sri Venkateswara University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/56/1/56_M2014263/_pdf

Reference28 articles.

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