First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6<I>H</I>-SiC{0001} Interfaces-Reference-Cited by-同舟云学术

First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces

Published:2006 Issue:11 Volume:47 Page:2690-2695
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Tanaka Shingo¹,Tamura Tomoyuki²,Okazaki Kazuyuki¹,Ishibashi Shoji²,Kohyama Masanori¹

Affiliation:

1. Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST)

2. Research Institute for Computational Sciences, National Institute of Advanced Industrial Science and Technology (AIST)

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/47/11/47_11_2690/_pdf

Reference48 articles.

1. 1) W. J. Choyke and L. Patrick: Silicon Carbide—A High Temperature Semiconductor, ed. by J. R. O’Conner and J. Smiltens, (Pergamon Press, Oxford 1960).

2. 2) Silicon Carbide and Related Materials 1995, ed. by S. Nakashima, H. Matsunami, S. Yoshida and H. Harima, IOP Conf. Proc. No. 142 (Institute of Physics and Physical Society, London 1996).

3. 3) Silicon Carbide Materials: Processing, and Devices, ed. by Z. C. Feng and J. H. Zhao, Optoelectronic Properties of Semiconductors and Superlattices Vol. 20 (Taylor and Franscis Books, London 2004).

4. 4) J. R. Waldrop, R. W. Grant, Y. C. Wang and R. F. Davis: J. Appl. Phys. 72 (1992) 4757–4760.

5. 5) J. R. Waldrop and R. W. Grant: Appl. Phys. Lett. 62 (1993) 2685–2687.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation;Acta Physica Sinica;2022

2. Calculating Study on Properties of Al (111)/6H-SiC (0001) Interfaces;Metals;2020-09-07

3. Electronic and mechanical properties of Al (100)/6H–SiC (0001) interfaces: a first-principles study;Materials Research Express;2019-12-12

4. Interfacial properties and electronic structure of β-SiC(111)/α-Ti(0001): A first principle study;Journal of Applied Physics;2013-01-14

5. Heterointerfaces: atomic structures, electronic states, and related properties;Journal of the Ceramic Society of Japan;2011