Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy-Reference-Cited by-同舟云学术

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Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Published:2017 Issue:3 Volume:58 Page:509-512
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Adachi Masayoshi¹,Sekiya Ryuta¹,Fukuyama Hiroyuki¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/58/3/58_M2016413/_pdf

Reference28 articles.

1. 1) B.M. Epelbaum, M. Bickermann, S. Nagata, P. Heimann, O. Filip and A. Winnacker: J. Crys. Growth 305 (2007) 317. 10.1016/j.jcrysgro.2007.04.008

2. 2) Z.G. Herro, D. Zhuang, R. Schlesser and Z. Sitar: J. Crys. Growth 312 (2010) 2519. 10.1016/j.jcrysgro.2010.04.005

3. 3) D. Nakamura, A. Suzumura and K. Shigetoh: Appl. Phys. Lett. 106 (2015) 082108. 10.1063/1.4913413

4. 4) K. Hironaka, T. Nagashima, S. Ikeda, M. Azuma, K. Takada and H. Fukuyama: J. Crys. Growth 312 (2010) 2527. 10.1016/j.jcrysgro.2010.04.007

5. 5) Y. You, M. Kato, M. Ohtsuka and H. Fukuyama: J. Am. Ceram. Soc. 96 (2013) 3054.

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1. Phase relation in Ga-Al-N2 systems and nitrogen solubilities in Ga-Al melts equilibrated with aluminum nitride;Materials Science and Engineering: B;2022-07

2. In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope;Materials Science in Semiconductor Processing;2022-05

3. Non-Polar a -Plane AlN Growth on Nitrided r -Plane Sapphire by Ga-Al Liquid-Phase Epitaxy;physica status solidi (b);2017-11-17

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