Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method-Reference-Cited by-同舟云学术

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Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method

Published:2006 Issue:2 Volume:47 Page:279-282
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Bae Joon Woo¹,Lim Jae-Won¹,Mimura Kouji¹,Isshiki Minoru¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/47/2/47_2_279/_pdf

Reference16 articles.

1. 1) G. D. Wilk and R. M. Wallace: Appl. Phys. Lett. 74 (1999) 2854–2856.

2. 2) B. H. Lee, L. Kang, R. Nieh, W. Qi and J. C. Lee: Appl. Phys. Lett. 76 (2000) 1926–1928.

3. 3) S. J. Lee, H. F. Luan, C. H. Lee, T. S. Jeon, W. P. Bai, Y. Senzaki, D. Roberts and D. L. Kwong: 2001 Symposium of VLSI Technical Digest, (2001) pp. 133.

4. 4) L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. Kang, W. J. Qi, R. Nieh, S. Gopalan, R. Choi and J. C. Lee: Tech. Dig. Int. Electron. Dev. Meet. 2000 (2000) pp. 35.

5. 5) J.-W. Lim and M. Isshiki: Met. Mater. Int. 11 (2005) 273–278.

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