Properties of GeSbSn Layer Used as Phase-Change Recording Medium-Reference-Cited by-同舟云学术

Properties of GeSbSn Layer Used as Phase-Change Recording Medium

Published:2007 Issue:4 Volume:48 Page:847-853
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Liu Chung Ping¹,Jeng Gwo Rou¹,Huang H. E.²

Affiliation:

1. Department of Electrical Engineering, Yuan Ze University

2. Materials & Electron-Optics Research Division, Chung-Shan Institute of Science and Technology

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/48/4/48_MER2006352/_pdf

Reference6 articles.

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2. 2) M. Miyamoto, J. Ushiyamt, K. Umezawa, A. Kashiwakura and R. Tamura: ISOM/ODS (2002) pp. 416.

3. 3) H. Shingai, T. Kato, H. Inoue, H. Hirata, H. Utsunomiya, H. Chihara and Y. Tanaka: TDK Corporation. ODS 2003 TuA7 pp. 85–57.

4. 4) N. Ohmachi, A. Ogawa, N. Morishita and N. Nakamura: Core Technology Center, Digital Media Network Company, Toshiba Corp., ODS 2003 TuA4 pp. 76–78.

5. 5) T. Tsukamoto, S. Ashida, T. Nakai, K. Yusu and K. Ichihura: Storage Materials and Devices Lab. Corporate Research and Development Center, Toshiba Corp., ODS 2003 TuA5 pp. 79–81.

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