C and Si Impurity Atoms on a GaAs(001) Surface-Reference-Cited by-同舟云学术

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C and Si Impurity Atoms on a GaAs(001) Surface

Published:2001 Issue:3 Volume:42 Page:397-398
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Sawamura Akitaka¹,Yao Hideki²,Kaji Mikio¹

Affiliation:

1. CAE Research Center, Sumitomo Electric Industries, Ltd.

2. Semiconductor Division, Sumitomo Electric Industries, Ltd.

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/42/3/42_3_397/_pdf

Reference18 articles.

1. 1) J. Saito, T. Ishikawa, T. Nakamura, K. Nanbu, K. Kondo and A. Shibatomi: Jpn. J. Appl. Phys. 25 (1986) 1216–1220.

2. 2) J. Saito, K. Nanbu, T. Ishikawa and K. Kondo: J. Appl. Phys. 63 (1988) 404–409.

3. 3) S. Sugata, A. Takamori, N. Takado, K. Asakawa, E. Miyauchi and H. Hashimoto: J. Vac. Sci. Technol. B 6 (1988) 1087–1091.

4. 4) Z. Yu, S. L. Buczkowshi, N. C. Giles and T. H. Myers: Appl. Phys. Lett. 69 (1996) 82–84.

5. 5) M. López-López, M. Meléndez-Lira and S. Goto: Appl. Phys. Lett. 71 (1997) 338–340.

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