GaAs surface cleaning by thermal oxidation and sublimation in molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340253
Reference14 articles.
1. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
2. Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film‐substrate interface
3. Preparation of a clean GaAs
4. Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
5. GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth
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