ウェハ接合界面における水分の影響
Author:
Affiliation:
1. Tohoku University
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/jiep/26/5/26_434/_pdf
Reference22 articles.
1. 1) H. Takagi, K. Kikuchi, R. Maeda, T. R. Chung, and T. Suga: "Surface activated bonding of silicon wafers at room temperature," Applied Physics Letters, Vol. 68, No. 16, pp. 2222–2224, 1996
2. 2) 須賀唯知：“表面活性化による常温接合とそのメカニズム，”応用物理，Vol. 89, No. 9, pp. 498–508, 2020
3. 3) K. Takeuchi, F. Mu, Y. Matsumoto, and T. Suga: "Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer," Advanced Materials Interfaces, Vol. 8, No. 5, p. 2001741, 2021
4. 4) Y.-L. Chao, Q.-Y. Tong, T.-H. Lee, M. Reiche, R. Scholz, J. C. S. Woo, and U. Gösele: "Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement," Electrochemical and Solid-State Letters, Vol. 8, No. 3, p. G74, 2005
5. 5) X. Lin, G. Liao, Z. Tang, and T. Shi: "UV surface exposure for low temperature hydrophilic silicon direct bonding," Microsystem Technologies, Vol. 15, No. 2, pp. 317–321, 2009
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